RAM INNOVATION 16GB DDR4 3200Mhz SODIMM

Sodimm Samsung DDR4 4GB  

Lexar SO-DIMM DDR4 8GB – R3200 Capacity 8GB Memory Type DDR4 Module Type/Form Factor 260-pin SO-DIMM Design Specification JEDEC R/C Bus width 64bit Speed DDR4 3200 (PC4 21300) CAS Latency 19（Default) Voltage VDD and VDDQ = 1.2V±0.06V DRAM activation voltage VPP= 2.5V (+0.25V / -0.125V) DRAM spec/VCC DDR4 STD 1.2V Operating temperature(Surface) 0°C to 85°C… selengkapnya

TEAMGROUP Memory Notebook Sodimm DDR4 8GB 3200Mhz FEATURES All new generation product of DRAM module 1.2V memory module Massive 32GB Kit Lifetime warranty Product Specifications Product Dimensions 67.6 x 30 mm Frequency 3200Mhz CAS Latency 22-22-22-52 DataTransfer Bandwidth PC4 25600 Capacity 8GB Tested Voltage 1.2V

D4 16 HY SD   • RAM 16GB DDR4 untuk performa optimal • Kecepatan 2666MHz, akses data lebih cepat

RAM Type: DDR4 DIMM Type: Unbuffered SO-DIMM Frequency: 3200 CAS Latency: CL22 Capacity: 8 GB Rank: 1Rx8 DRAM: 1Gx8 Voltage: 1.2V Pin: 260 pin PCB Height: 1.18 inches Operating Temperature: 0°C (32°F) ~ 85°C (185°F)

Kapasitas: 8 GB Kecepatan : 3200Mhz Chipset : V-GEN / RESCUE (Support by Samsung / Hynix / Micron) Slot : DIMM 260 Pin Type : Unbuffered Voltage : 1.2V Dimensi : 68 x 30 x 2 mm Berat : 200gr

Dimensi : 68mm x 30mm x 2mm Kecepatan : 1600Mhz Chipset : V-GeN Slot : DIMM 204 Pin Type : Unbuffered Voltage : 1.5V ECC : No Registered : No Garansi : Limited Lifetime Warranty

Dimensi : 68mm x 30mm x 2mm Kecepatan : 2400Mhz Chipset : V-GeN Slot : DIMM 260 Pin Type : Unbuffered Voltage : 1.2V

RAM Hynix DDR3L 8GB 12800S Sodimm Laptop

RAM Hynix DDR4 8GB 2666 Mhz PC21300 Sodimm Laptop Memory