RAM Hynix DDR3L 8GB 12800S Sodimm Laptop

Lexar SO-DIMM DDR4 8GB – R3200 Capacity 8GB Memory Type DDR4 Module Type/Form Factor 260-pin SO-DIMM Design Specification JEDEC R/C Bus width 64bit Speed DDR4 3200 (PC4 21300) CAS Latency 19（Default) Voltage VDD and VDDQ = 1.2V±0.06V DRAM activation voltage VPP= 2.5V (+0.25V / -0.125V) DRAM spec/VCC DDR4 STD 1.2V Operating temperature(Surface) 0°C to 85°C… selengkapnya

RAM Hynix DDR4 8GB 2666 Mhz PC12300 Sodimm Laptop Memory

KVR16N11/8 8GB 2Rx8 1G x 64-Bit PC3-12800 CL11 240-Pin DIMM 8GB DDR3 – 1600 CL(IDD) : 11 cycles Row Cycle Time (tRCmin) : 48.125ns(min.) Refresh to Active/Refresh : 260ns(min.) Command Time (tRFCmin) Row Active Time (tRASmin) : 35ns(min.) Waranty void if removed

Type : SO-DIMM DDR4 Size : 68 x 30 x 2 mm: Status : Regular Kapasitas : 4 GB Kecepatan : 2400

RAM Vgen DDR4 8GB 2666 Mhz Sodimm Laptop Type : SO-DIMM DDR4 Size : 68 x 30 x 2 mm: Status : Regular Kapasitas : 8 GB Kecepatan : 2666 MHz

Kapasitas: 8 GB Kecepatan : 3200Mhz Chipset : V-GEN / RESCUE (Support by Samsung / Hynix / Micron) Slot : DIMM 260 Pin Type : Unbuffered Voltage : 1.2V Dimensi : 68 x 30 x 2 mm Berat : 200gr

Dimensi : 68mm x 30mm x 2mm Kecepatan : 1600Mhz Chipset : V-GeN Slot : DIMM 204 Pin Type : Unbuffered Voltage : 1.35V (LOW VOLTAGE) ECC : No Registered : No Garansi : Limited Lifetime Warranty

Dimensi : 68mm x 30mm x 2mm Kecepatan : 2400Mhz Chipset : V-GeN Slot : DIMM 260 Pin Type : Unbuffered Voltage : 1.2V

Sodimm Samsung DDR4 4GB  

RAM Transcend 4GB DDR4 3200 Mhz Sodimm Laptop 1Rx8