RAM TEAMGROUP Elite Memory Laptop Sodimm DDR4 16GB 3200Mhz

Kapasitas: 8 GB Kecepatan : 3200Mhz Chipset : V-GEN / RESCUE (Support by Samsung / Hynix / Micron) Slot : DIMM 260 Pin Type : Unbuffered Voltage : 1.2V Dimensi : 68 x 30 x 2 mm Berat : 200gr

Dimensi : 68mm x 30mm x 2mm Kecepatan : 2400Mhz Chipset : V-GeN Slot : DIMM 260 Pin Type : Unbuffered Voltage : 1.2V

TEAMGROUP Memory Notebook Sodimm DDR4 8GB 3200Mhz FEATURES All new generation product of DRAM module 1.2V memory module Massive 32GB Kit Lifetime warranty Product Specifications Product Dimensions 67.6 x 30 mm Frequency 3200Mhz CAS Latency 22-22-22-52 DataTransfer Bandwidth PC4 25600 Capacity 8GB Tested Voltage 1.2V

SPESIFIKASI: – RAM Type : DDR4 – DIMM Type : Unbuffered SO-DIMM – Frequency : 3200 – CAS Latency : CL22 – Capacity : 16GB

RAM Hynix DDR3L 8GB 12800S Sodimm Laptop

Sodimm VGen DDR3 8GB

Sodimm Samsung DDR4 4GB  

Form Factor : SO-DIMM Memory Type : DDR4 Capacity : 16GB (16GBx1) Channel Config : Single Channel Tested Speed : 3200MHz CAS Latency : 22-22-22-52 DRAM Voltage : 1.20V Warranty : Limited Lifetime Additional Notes : Rated SPD frequency requires compatible CPU and chipset support

Memory RAM LEXAR DDR4 16GB PC3200 SODIMM – RAM Notebook DDR4 16GB Capacity 16GB Memory Type DDR4 Module Type/Form Factor 260-pin SO-DIMM Design Specification JEDEC R/C Bus width 64bit Speed DDR4 3200 (PC4 21300) CAS Latency 19（Default) Voltage VDD and VDDQ = 1.2V±0.06V DRAM activation voltage VPP= 2.5V (+0.25V / -0.125V) DRAM spec/VCC DDR4 STD… selengkapnya

KVR16N11/8 8GB 2Rx8 1G x 64-Bit PC3-12800 CL11 240-Pin DIMM 8GB DDR3 – 1600 CL(IDD) : 11 cycles Row Cycle Time (tRCmin) : 48.125ns(min.) Refresh to Active/Refresh : 260ns(min.) Command Time (tRFCmin) Row Active Time (tRASmin) : 35ns(min.) Waranty void if removed