RAM Transcend SO-DIMM JETRAM DDR4 3200 16GB 16 IC

RAM Hynix DDR3L 4gb 12800S Sodimm Laptop

Memory RAM LEXAR DDR4 16GB PC3200 SODIMM – RAM Notebook DDR4 16GB Capacity 16GB Memory Type DDR4 Module Type/Form Factor 260-pin SO-DIMM Design Specification JEDEC R/C Bus width 64bit Speed DDR4 3200 (PC4 21300) CAS Latency 19（Default) Voltage VDD and VDDQ = 1.2V±0.06V DRAM activation voltage VPP= 2.5V (+0.25V / -0.125V) DRAM spec/VCC DDR4 STD… selengkapnya

RAM Type: DDR4 DIMM Type: Unbuffered SO-DIMM Frequency: 3200 CAS Latency: CL22 Capacity: 8 GB Rank: 1Rx8 DRAM: 1Gx8 Voltage: 1.2V Pin: 260 pin PCB Height: 1.18 inches Operating Temperature: 0°C (32°F) ~ 85°C (185°F)

RAM Hynix DDR4 4GB 2666 mhz Soddim Laptop PC21300

SPESIFIKASI: – RAM Type : DDR4 – DIMM Type : Unbuffered SO-DIMM – Frequency : 3200 – CAS Latency : CL22 – Capacity : 16GB

Kapasitas: 8 GB Kecepatan : 3200Mhz Chipset : V-GEN / RESCUE (Support by Samsung / Hynix / Micron) Slot : DIMM 260 Pin Type : Unbuffered Voltage : 1.2V Dimensi : 68 x 30 x 2 mm Berat : 200gr

RAM Vgen DDR4 8GB 2666 Mhz Sodimm Laptop Type : SO-DIMM DDR4 Size : 68 x 30 x 2 mm: Status : Regular Kapasitas : 8 GB Kecepatan : 2666 MHz

Dimensi : 68mm x 30mm x 2mm Kecepatan : 1600Mhz Chipset : V-GeN Slot : DIMM 204 Pin Type : Unbuffered Voltage : 1.5V ECC : No Registered : No Garansi : Limited Lifetime Warranty

KVR16N11/8 8GB 2Rx8 1G x 64-Bit PC3-12800 CL11 240-Pin DIMM 8GB DDR3 – 1600 CL(IDD) : 11 cycles Row Cycle Time (tRCmin) : 48.125ns(min.) Refresh to Active/Refresh : 260ns(min.) Command Time (tRFCmin) Row Active Time (tRASmin) : 35ns(min.) Waranty void if removed

Type : SO-DIMM DDR4 Size : 68 x 30 x 2 mm: Status : Regular Kapasitas : 4 GB Kecepatan : 2400